Aluminium oxide wafers – AOS 218 247

Product ID

AOS 218 247

Product Category

Thermal Interface Material

Description

TO 218, TO 247, 25 x 21 x 3 mm, other strengths and versions on request

Parameters

  • thermal resistance:: 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
  • dielectric strength:: 10 kV/mm

Features

for transistor TO 218
material AL2O3 – ceramics
thickness 3mm
specific electrical resistance >1014 Ω/cm
thermal conductivity 25W/m·K
dielectric constant 9
linear expansion coefficient ~8·10-6/K
flatness 0.02mm
thermal resistance 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
dielectric strength 10 kV/mm

Datasheet

Download datasheet

Description

Product ID

AOS 218 247

Product Category

Thermal Interface Material

Description

TO 218, TO 247, 25 x 21 x 3 mm, other strengths and versions on request

Parameters

  • thermal resistance:: 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
  • dielectric strength:: 10 kV/mm

Features

for transistor TO 218
material AL2O3 – ceramics
thickness 3mm
specific electrical resistance >1014 Ω/cm
thermal conductivity 25W/m·K
dielectric constant 9
linear expansion coefficient ~8·10-6/K
flatness 0.02mm
thermal resistance 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
dielectric strength 10 kV/mm

Datasheet

Download datasheet

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