Aluminium oxide wafers – AOS 247

Product ID

AOS 247

Product Category

Thermal Interface Material

Description

TO 247, 23 x 20 x 1 mm, other strengths and versions on request

Parameters

  • thermal resistance:: 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
  • dielectric strength:: 10 kV/mm

Features

for transistor TO 247
material AL2O3 – ceramics
thickness 1mm
specific electrical resistance >1014 Ω/cm
thermal conductivity 25W/m·K
dielectric constant 9
linear expansion coefficient ~8·10-6/K
flatness 0.02mm
thermal resistance 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
dielectric strength 10 kV/mm

Datasheet

Download datasheet

Description

Product ID

AOS 247

Product Category

Thermal Interface Material

Description

TO 247, 23 x 20 x 1 mm, other strengths and versions on request

Parameters

  • thermal resistance:: 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
  • dielectric strength:: 10 kV/mm

Features

for transistor TO 247
material AL2O3 – ceramics
thickness 1mm
specific electrical resistance >1014 Ω/cm
thermal conductivity 25W/m·K
dielectric constant 9
linear expansion coefficient ~8·10-6/K
flatness 0.02mm
thermal resistance 0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
dielectric strength 10 kV/mm

Datasheet

Download datasheet

Add to Quote